Datasheet > UNR211V|UN211V

UNR211V|UN211V

更新时间： 2024-09-15 23:39:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	435K
描述
Composite Device - Transistors with built-in Resistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UNR211V|UN211V 数据手册

Transistors with built-in Resistor

UNR211x Series (UN211x Series)

Silicon PNP epitaxial planar type

Unit: mm

+0.10

–0.05

0.40

+0.10

For digital circuits

0.16

–0.06

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• Mini type package allowing easy automatic insertion through tape

(0.95) (0.95)

packing and magazine packing

1.9 ^0.1

+0.20

2.90

–0.05

■ Resistance by Part Number

10˚

Marking Symbol (R₁)

(R₂)



• UNR2110 (UN2110)

• UNR2111 (UN2111)

• UNR2112 (UN2112)

• UNR2113 (UN2113)

• UNR2114 (UN2114)

• UNR2115 (UN2115)

• UNR2116 (UN2116)

• UNR2117 (UN2117)

• UNR2118 (UN2118)

• UNR2119 (UN2119)

• UNR211D (UN211D)

• UNR211E (UN211E)

• UNR211F (UN211F)

• UNR211H (UN211H)

• UNR211L (UN211L)

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Internal Connection



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

R₁

R₂

• UNR211M (UN211M) EI

• UNR211N (UN211N)

• UNR211T (UN211T)

• UNR211V (UN211V)

• UNR211Z (UN211Z)

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

−100

°C

200

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00006CED

12 3 4 5 6 7...17

中文翻译

下载PDF

与UNR211V|UN211V相关器件

型号	品牌	获取价格	描述	数据表
UNR211VR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G
UNR211VS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINI3-G
UNR211W	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR211XSERIES(UN211XSERIES)	ETC	获取价格	UNR211X Series (UN211X Series) - Transistors with built-in Resistor
UNR211Z	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR211Z(UN211Z)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR211Z\|UN211Z	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2121	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR2121(UN2121)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2121\|UN2121	ETC	获取价格	Composite Device - Transistors with built-in Resistor